5SHY3545L0010 3BHB013088R0001 反并联二极管和门]极驱动电路集成

IGCT是将GTO芯片与反并联二极管和门]极驱动电路集成在一起再与其门极驱动器在外里以低电感方式连接结合了晶体管的稳走关断能力和晶闻管低通态损耗的优点在导通阶段发挥晶闸管的性能,关断阶段呈现晶体管的特性。

-林产品参数:艹*

一输入电压:24VDC

-输出电压0~10vdc

-通信协议:Modbus RTU-外形尺寸:100mmx80mmx40mm

IGCT integrates the GTO chip with the anti-parallel diode and gate driver circuit, and then connects it with the gate driver in a low inductance mode outside. It combines the stable turn-off ability of the transistor and the advantages of the low-on-state loss of the transistor. It gives full play to the performance of the thyristor at the on-on stage and presents the characteristics of the transistor at the off-off stage.

- Forest product parameters: Fuck *

One input voltage :24VDC

- Output voltage 0 to 10vdc

- Communication protocol :Modbus RTU- Dimensions :100mmx80mmx40mm