GFD563A101 3BHE046836R0101 变频器

GFD563A101 3BHE046836R0101 ABB支大规IGCT(lntergraied Ga:e Commuisted Thyris:crs)是1996年问世的用于巨型电力电子成套装置中的新型电力半号

体密件。IGCT是一种基于GTO结构，利用集成栅极结构进行栅极硬抱动、采用城冲层结构及阳报造明发射极技术GFD563A101的新型大功率半导体开关器什,具有品闹管的通态特性及品体管的开关特性，由于采用了缓冲结构以及浅层发解极技术,因而使动态损耗降低了约

50%,另外,此类密什还在一个芯片,上集成了具有良好动态特性的读流_GFD563A101 3BHE046836R0101  二极市以算胜特的户武美现0时i家连电定的开关特性有机结合

输入电压:变频器所需的电源电压，这通常取决于您的电力系统。输出电压和电流:变频器可以提供给电机的电压和电流范围变频器可以控制电机的速度范围，通常从低速到高速调速范围:动态响应变频器对速度或转矩变化的响应速度。控制方式::变频器可能支持多种控制方式，如V/F控制、矢量控制等

GFD563A101 3BHE046836R0101 ABB IGCT(lntergraied Ga:e Commuisted Thyris:crs) is a new power half for giant power electronics packages introduced in 1996

The body is dense. IGCT is a new type of high-power semiconductor switch based on GTO structure, which uses integrated gate structure for hard grid-holding, adopts city impact layer structure and positive emitter technology GFD563A101. It has the on-state characteristics of the product and the switching characteristics of the product body tube. Because of the buffer structure and the shallow emitter technology, the dynamic loss is reduced by about

50%, in addition, this kind of mish is also integrated on a chip with good dynamic characteristics of the read flow_GFD563A101 3BHE046836R0101 bipolar market to the Totake Mi current 0 i home connected switching characteristics organic combination

Input voltage: The power supply voltage required by the inverter, which usually depends on your power system. Output voltage and current: Range of voltage and current that the inverter can provide to the motor The inverter can control the speed range of the motor, usually from low speed to high speed speed range: Dynamic response The speed at which the inverter responds to changes in speed or torque. Control mode: The inverter may support a variety of control modes, such as V/F control, vector control, etc