5SHY4045L0001 3BHB018162R0001 电力半导体

5SHY4045L0001 3BHB018162R0001是ABB的一款集成门极换流晶闸管(IGCT)产品，属于5SHY系列，IGCT是20世纪90年代后期呈现的新式申力电子器材，它将IGBT(绝缘栅双极晶体管)与GTO(门极可关断晶闸管)的长处结合起来，具有开关速度快、容量大、所需驱动功率大等特色。
具体来说，5SHY4045L0001 3BHB018162R0001的容量与GTO适当，但其开关速度比GTO快10倍，这意味着它能在更短的时间内完成开关动作然后提高电力转化功率。此外，与GTO相比，IGCT能够省去庞大而杂乱的缓冲电路，这有助于简化体系规划并降低成本
然而，需求留意的是，尽管IGCT具有许多长处，但其所需的驱动功率依然很大。这可能会增加体系的能耗和杂乱性。别的，尽管IGCT在企图取代GTO在大功率场合的位置，但它目前依然面临与其他新式器材(如IGBT)的剧烈竞争
5SHY4045L00013BHB018162R000?集成洲放换流晶用|GCT(lntergrated Gate commuotedThvistors)是1996年问世的用于巨型电力电子成套设备中的新式电力半导体器材,IGCT是种基于GTO结构、利用集成栅极结构进行栅极硬驱动、选用缓冲中层结构及阳极通明发射极技能的新式大功半导体开关器材，具有品闸管的通态特性及晶体管的开关特性。5SHY4045L000)3BHBO18162R0001因为选用了缓冲结构以及浅层发射极技能,因而使动态损耗降低了约50%，别的，此类器材还在一个芯片上集成了具有良好动态特性的续流二极管，然后以其独特的方式实现了晶闸管的低通态压降、高阻断电压和晶体管稳定的开关特性有机结合

5SHY4045L0001 3BHB018162R0001 is an integrated gate commutated thyristor (IGCT) product from ABB, belonging to the 5SHY series. IGCT is a new Shenli electronic device presented in the late 1990s. It combines the advantages of IGBT(insulated gate bipolar transistor) and GTO(gate can be turned off thyristor), and has the characteristics of fast switching speed, large capacity, and large drive power required.

Specifically, the 5SHY4045L0001 3BHB018162R0001 has the same capacity as the GTO, but its switching speed is 10 times faster than the GTO, which means it can complete the switching action in less time and improve the power conversion. In addition, compared with GTO, IGCT can eliminate large and messy buffer circuits, which helps simplify system planning and reduce costs

However, it is important to note that despite the many advantages of IGCT, the drive power required is still large. This can increase the energy consumption and clutter of the system. In addition, although the IGCT is trying to replace the GTO in the high-power situation, it is still facing serious competition with other new devices (such as IGBTs)

5SHY4045L00013BHB018162R000? Integrated continent converter crystal |GCT(lntergrated Gate) commuotedThvistors (commuotedThvistors) is a new power semiconductor equipment which is published in 1996 and used in giant power electronic complete sets of equipment. IGCT is a new commuoted semiconductor switching equipment based on GTO structure, uses integrated gate structure to drive gate hard, selects buffer intermediate structure and anode bright emitter skills. It has the on-state characteristics of the gate tube and the switching characteristics of the transistor. 5SHY4045L000)3BHBO18162R0001 Because of the selection of buffer structure and shallow emitter skills, so that the dynamic loss is reduced by about 50%, in addition, such devices are also integrated on a chip with good dynamic characteristics of the continuous current diode, Then, the combination of low on-state voltage drop, high blocking voltage and transistor stability is realized in its unique way